ME7607-G

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME7607 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View FEATURES ● RDS(ON)≦6mΩ@VGS=-10V ● RDS(ON)≦9mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter * The Ordering In...