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ME7686 Datasheet

Part Number ME7686
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME7686 DatasheetME7686 Datasheet (PDF)

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in .

  ME7686   ME7686






Part Number ME7688-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME7686 DatasheetME7688-G Datasheet (PDF)

ME7688/ME7688-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7688 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss .

  ME7686   ME7686







Part Number ME7688
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME7686 DatasheetME7688 Datasheet (PDF)

ME7688/ME7688-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7688 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss .

  ME7686   ME7686







Part Number ME7686-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME7686 DatasheetME7686-G Datasheet (PDF)

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in .

  ME7686   ME7686







N-Channel MOSFET

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View ME7686/ME7686-G FEATURES ● RDS(ON)≦10.5mΩ@VGS=10V ● RDS(ON)≦18mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● NB/MB High side switching ● Battery Powered System ● DC/DC Converter ● Load Switch * The Ordering Information: ME7686/ME7686-G (Green product-Halo.


2018-03-22 : P83C562    SMA4205    LM19    SMA4105    LM2576-5.0    LM1576-5.0    LM1458C    LM1131C    LM1131B    LM1131A   


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