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ME7809-G Datasheet

Part Number ME7809-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7809-G DatasheetME7809-G Datasheet (PDF)

P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3) Botton View ME7809/ME7809.

  ME7809-G   ME7809-G






P-Channel MOSFET

P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3) Botton View ME7809/ME7809-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter low side switching ● Load Switch * The Ordering Information: ME7809 (Pb-free) ME7809-G (Green product- Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Vol.


2018-03-22 : P83C562    SMA4205    LM19    SMA4105    LM2576-5.0    LM1576-5.0    LM1458C    LM1131C    LM1131B    LM1131A   


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