ME7890ED/ME7890ED-G
N-Channel 30V (D-S) MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME7890ED-G is the N-Channel logic...
ME7890ED/ME7890ED-G
N-Channel 30V (D-S)
MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME7890ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.3x3.3) Top View
FEATURES
● RDS(ON)≦4.6mΩ@VGS=10V ● RDS(ON)≦7.8mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch
Ordering Information: ME7890ED (Pb-free)
ME7890ED-G (Green product-Hal...
