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ME80N08-G Datasheet

Part Number ME80N08-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel 80-V (D-S) MOSFET
Datasheet ME80N08-G DatasheetME80N08-G Datasheet (PDF)

N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦4.9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS .

  ME80N08-G   ME80N08-G






N-Channel 80-V (D-S) MOSFET

N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦4.9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME80N08 (Pb-free) ME80N08-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Tc=25℃ TC=70℃ Pulsed Drain Currenta Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Ambient** Symbol VDSS VGSS ID IDM PD TJ, Tstg RθJC Limit 80 ±20 196 164 784 300 210 -55 to 175 0.5 Unit V V A A W ℃ ℃/W * Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. ** The device mounted on 1in2 FR4 board with 2 oz copper. NMnaoy,v2, 021020-9V–erV1e.2rsion 1.0 01 N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) VSD Drain-Source Breakdown Voltage .


2016-01-14 : 2N2219    2N2219A    18F252    IRLR4343PbF    IRLU4343PbF    IRLU4343-701PbF    IRFR12N25DPbF    IRFU12N25DPbF    IRL3715ZCSPbF    IRL3715ZCLPbF   


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