N-Channel 80V (D-S) MOSFET
ME80N08AF/ME80N08AF-G
GENERAL DESCRIPTION
The ME80N08AF is the N-Channel logic enhancement ...
N-Channel 80V (D-S)
MOSFET
ME80N08AF/ME80N08AF-G
GENERAL DESCRIPTION
The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220F) Top View
* The Ordering Information: ME80N08A F(Pb-free) ME80N08AF-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol Maximum Ratings
Unit
Drain-Source
Voltage
VDS 80
V
Gate-Source
Voltage
Continuous Drain Current*
Pulsed Drain Currenta Power Dissipation
Tc=25℃ TC=70℃
TC=25℃ TC=70℃
VGS ID IDM PD
±20 81 68 326 66 46
V A A W...
