ME80N75AT

ME80N75AT / ME80N75AT-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦10.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch (TO-220) Top View e Ordering Information: ME80N75AT (Pb-free) ME80N75AT-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Rating Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±25 V Continuous Drain Current* TC=25℃ TC=70℃ ID 93 78 A Pulsed Drain Current IDM 372 A Maximum Power Dissipation TC=25℃ TC=70℃ PD 200 140 W Operating Junc...