N-Channel 100-V (D-S) MOSFET
ME95N10T/ME95N10T-G
GENERAL DESCRIPTION
The ME95N10T is the N-Channel logic enhancement m...
N-Channel 100-V (D-S)
MOSFET
ME95N10T/ME95N10T-G
GENERAL DESCRIPTION
The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
FEATURES
● RDS(ON)≦8.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
PIN CONFIGURATION
(TO-220) Top View
* The Ordering Information: ME95N10T (Pb-free) ME95N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source
Voltage
VDS 100
Gate-Source
Voltage Continuous Drain Current*
TC=25℃ TC=70℃
VGS ID
±25 124 104
Pulsed Drain Current Maximum Power Dissipation
TC=25℃ TC=70℃
IDM PD
496 300 210
Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Case**
RθJC
0.5
Unit
V ...
