ME9926-G

Dual N-Channel 20V (D-S) MOSFET ME9926/ME9926-G GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦29mΩ@VGS=4.5V ● RDS(ON)≦42mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View e Ordering Information: ME9926 (Pb-free) ME9926-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation* Operating Junction Temperature TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Symbol VDSS VGSS ID IDM PD TJ RθJA 10sec SteadyState 20 ±12 6.6 5.2 5.2 4.2 30 2.0 1.25 1.2 0.8 -55 to 150 Typ 45 Typ 80 Max 62.5 Max 100 e * The device mounted on 1in2 FR4 board with 2 oz copper Unit V V A A W ℃ ℃/W Feb, 2009-V...