Home > MEB Datasheet pdf > Micro Edgeboard

(PDF) MEB Datasheet download


Manufacture Part Number Description PDF

ITT Industries
MEB Micro Edgeboard
Micro Edgeboard - .050" Contact Spacing The Micro Edgeboard (MEB) connector series provides a combination of high density and high reliability for applications in airborne and space systems, computers and peripherals, and industrial /commercial control system
MEB

HITANO
MEB Metallized Polyester Film Capacitor
MEB SERIES Metallized Polyester Film Capacitor, Mini Box Type with 5mm Pitch MEB are metallized polyester film with stacked technology as dielectric and encapsulated in plastic case with epoxy resin filled. FEATURES  High pulse strength  High contact reliability  Self-h
MEB

Powerex Powers
MEB00806 Three-Phase Diode Bridge Module (60 Amperes/800 Volts)
MEB00806 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Module 60 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G C Q - M4 THD. (5 TYP.) K H H B M N F E MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800
MEB

Mitel Networks
MEB90500 Customer Evaluation Kit Advance Information
MEB90500 - E1 Customer Evaluation Kit Advance Information ISSUE 1 March 1998 Features • • • • • • • • • Allows Mitel customers to evaluate the MT90500AL device Demonstrates the advantages of Mitel AAL1 solution Eases bench-top prototyping to reduce developmen
MEB

Mitel Networks
MEB90812 Evaluation Kit Preliminary Information
MEB90812 Evaluation Kit Preliminary Information Features • • • • • Allows Mitel customers to evaluate the MT90812 device Demonstrates the advantages of Mitel Telecom solution Shows the power of the MEB90812 on a single board solution Eases bench-top prototyping to reduc
MEB

Mitel Networks
MEB90812A Evaluation Kit Preliminary Information
MEB90812 Evaluation Kit Preliminary Information Features • • • • • Allows Mitel customers to evaluate the MT90812 device Demonstrates the advantages of Mitel Telecom solution Shows the power of the MEB90812 on a single board solution Eases bench-top prototyping to reduc
MEB

Mitel Networks
MEB90812A-P Evaluation Kit Preliminary Information
MEB90812 Evaluation Kit Preliminary Information Features • • • • • Allows Mitel customers to evaluate the MT90812 device Demonstrates the advantages of Mitel Telecom solution Shows the power of the MEB90812 on a single board solution Eases bench-top prototyping to reduc
MEB

Matsuki
MEBSS123 N-Channel MOSFET
N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize
MEB

Matsuki
MEBSS123-G N-Channel MOSFET
N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize
MEB

Matsuki
MEBSS138 N-Channel MOSFET
MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL DESCRIPTION The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-
MEB

Matsuki
MEBSS138-G N-Channel MOSFET
MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL DESCRIPTION The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-
MEB

Matsuki
MEBSS138D N-Channel MOSFET
MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailor
MEB

Matsuki
MEBSS138D-G N-Channel MOSFET
MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailor
MEB

Matsuki
MEBSS138DK N-Channel MOSFET
MEBSS138DK/MEBSS138DK-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138DK is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tai
MEB

Matsuki
MEBSS138DK-G N-Channel MOSFET
MEBSS138DK/MEBSS138DK-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138DK is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tai
MEB

Matsuki
MEBSS84 P-Channel MOSFET
MEBSS84/ MEBSS84-G P-Channel 50V Enhancement Mode Mosfet GMENOESRFAELT DESCRIPTION FEATURES The MEBSS84 is the P-Channel logic enhancement mode power ● RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦6Ω@VGS=-5V
MEB

Matsuki
MEBSS84-G P-Channel MOSFET
MEBSS84/ MEBSS84-G P-Channel 50V Enhancement Mode Mosfet GMENOESRFAELT DESCRIPTION FEATURES The MEBSS84 is the P-Channel logic enhancement mode power ● RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦6Ω@VGS=-5V
MEB




Alternate Search Terms
MEB datasheet MEB component MEB integrated circuit MEB schematic MEB application note EB B ME M

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)