MOSFET. MEM2309 Datasheet

MEM2309 Datasheet PDF

Part MEM2309
Description P-Channel MOSFET
Feature MEM2309; MEM2309 P-Channel MOSFET MEM2309S Descriptionÿ MEM2309SGSeries P-channel enhancement mode field-effe.
Manufacture MicrOne
Datasheet
Download MEM2309 Datasheet

MEM2309 P-Channel MOSFET MEM2309S Descriptionÿ MEM2309SGSeri MEM2309 Datasheet





MEM2309
MEM2309
P-Channel MOSFET MEM2309S
Description
MEM2309SGSeries P-channel enhancement
mode field-effect transistor ,produced with
high cell density DMOS trench technology,
which is especially used to minimize on-state
resistance.
This device particularly suits low voltage
applications, and low power dissipation.
Feature
l -30V/-6A
RDS(ON) =53mΩ@ VGS=-10V,ID=-6A
RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A
l High Density Cell Design For Ultra Low
On-Resistance
l Surface mount package:SOP8
Pin Configuration
Typical Application:
l Power management
l Load switch
l Battery protection
Absolute Maximum Ratings:
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain
TA=25
Current
TA=70
Pulsed Drain Current1,2
Total Power TA=25
Dissipation
TA=70
Operating Temperature
Range
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
Pd
TOpr
Tstg
Ratings
-30V
±20
-6
-3.2
-30
2
0.8
150
-65/150
Unit
V
V
A
A
W
V5.0
1
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MEM2309
MEM2309
Thermal Characteristics:
Parameter
Thermal Resistance, Junction-to-Ambient3
Symbol
RθJA
Ratings
50
Unit
/W
Electrical Characteristics:
MEM2309SG
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Symbol Test Condition
Static Characteristics
V(BR)DSS
VGS(th)
VGS=0V,
ID=-250uA
VDS= VGS,
ID=-250uA
VDS=0V
IGSS
VGS=20V
VDS=0V
VGS=-20V
IDSS
VDS=-24V
VGS=0V
Min Type Max Unit
-30 -34
V
-1.1 -1.3 -2 V
5 30 nA
-5 -30 nA
-6 -300 nA
Static Drain-Source
On-Resistance
RDS(ON)1 VGS=-10V,ID=-6A 33 53 65 mΩ
RDS(ON)2 VGS=-4.5V,ID=-4A 50 68 80 mΩ
Forward Transconductance
Drain-Source Diode Forward
Current
gFS
IS
VDS = –5 V,
ID = –5.3 A
Source-drain (diode forward)
voltage
VSD
VGS=0V,ID=-1A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = -15V,
VGS = 0 V,
f = 1 MHz
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = -15 V,
ID=-1 A,
VGEN = -10 V,
Rg = 6 Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -15 V,
VGS = -10 V,
ID = -4A
1 Repetitive rating, pulse width limited by junction temperature.
10 S
-2.1 A
-0.8 -1.2 V
530
140 pF
70
8 15
15
15
25
25
ns
10 15
10 15
2.2 nc
2.0
2 Pulse test; pulse width 300 us, duty cycle 2%.
3 Surface Mounted on FR4 Board, t 10 sec.
V5.0
2
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MEM2309
Typical Performance Characteristics
MEM2309
V5.0
3
Free Datasheet http://www.datasheet4u.com/






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