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MEM2309 MOSFET Datasheet PDFP-Channel MOSFET P-Channel MOSFET |
| Part Number | MEM2309 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | MEM2309
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4. 5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8 l l Pin Configurationÿ Typical Application: l l l Power management Load switch Battery protection m ρW 3V Ϋm w`R . |
| Manufacture | MicrOne |
| Datasheet |
| Part Number | MEM2309 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | MEM2309
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4. 5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8 l l Pin Configurationÿ Typical Application: l l l Power management Load switch Battery protection m ρW 3V Ϋm w`R . |
| Manufacture | MicrOne |
| Datasheet |
| Part Number | MEM2309 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | MEM2309
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4. 5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8 l l Pin Configurationÿ Typical Application: l l l Power management Load switch Battery protection m ρW 3V Ϋm w`R . |
| Manufacture | MicrOne |
| Datasheet |
| Part Number | MEM2309 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | MEM2309
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4. 5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8 l l Pin Configurationÿ Typical Application: l l l Power management Load switch Battery protection m ρW 3V Ϋm w`R . |
| Manufacture | MicrOne |
| Datasheet |
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