MEM2309

MEM2309 P-Channel MOSFET MEM2309S Descriptionÿ MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8 l l Pin Configurationÿ Typical Application: l l l Power management Load switch Battery protection m ρW 3V Ϋm w`R yΡ b€ Absolute Maximum Ratings: Parameter Drain-Source Voltage Gate-Source Voltage TA=25! Drain Current TA=70! Pulsed Drain Current1,2 TA=25! Total Power Dissipation TA=70! Operating Temperature Range Storage Temperature Range VDSS VGSS ID IDM Pd TOpr Tstg ww w.g ofo te ch .c om Symbol Ratings -30V ±20 -6 -3.2 -30 2 0.8 150 -65/150 Unit V V A A W ! ! V5.0 1 Free Datasheet http://www.datasheet4u.com/ MEM2309 Thermal Characteristics: Parameter Thermal Resistance, Junction-to-Ambient 3 Symbol RθJA Ratings 50 Unit ! /W Electrical Characteristics: MEM2309SG Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Current Source-drain (diode forward) voltage Symbol Test Condition Static Characteristics VGS=0V, V(BR)DSS ID=-250uA ...