N - Channel 50-V (D-S) MOSFET
MESS138W/MESS138W-G
GENERAL DESCRIPTION
The MESS138W is the N-Channel logic enhancement ...
N - Channel 50-V (D-S)
MOSFET
MESS138W/MESS138W-G
GENERAL DESCRIPTION
The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦3.5Ω@VGS=5V ● RDS(ON)≦7Ω@VGS=2.75V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(SOT-323) Top View
* The Ordering Information: MESS138W (Pb-free) MESS138W-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source
Voltage
VDS 50
Gate-Source
Voltage Continuous Drain
TA=25℃
VGS ID
±20 0.5
Pulsed Drain Current Maximum Power Dissipation
TA=25℃
...
