MEST2G-010-20
Pin Diode Switch Element
Features
Supports up to 10 W Power Low Insertion Loss: 0.5 dB up to 2.7 GHz ...
MEST2G-010-20
Pin Diode Switch Element
Features
Supports up to 10 W Power Low Insertion Loss: 0.5 dB up to 2.7 GHz High Isolation: 23 dB up to 2.7 GHz RoHS* Compliant
Description
A broadband medium power switch element in a 1.9 x 1.1 mm DFN package. This device is electrical series and thermal direct to ground (EST2G). This device is designed for wireless infrastructure applications and test instruments. It is also suited for other applications from 100 MHz up to 10 GHz.
Rev. V1
Electrical Specifications: TC = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units Min.
Breakdown
Voltage (VBR) Lifetime (t) I-Region (w)
IR = 10 µA IF = 10 mA, IR = 6 mA, 10% / 90%
I-Layer
V 100 ns — µm —
Series Resistance (RS) Junction Capacitance (CJ)
Insertion Loss (IL) Input Return Loss (IRL)
Isolation (ISO)
IF = 100 mA
VR = -10 V, 1 MHz IF = 50 mA, 2.3 ~ 2.7 GHz
IF = 50 mA, <8 GHz IF = 50 mA, 2.3 ~ 2.7 GHz
IF = 50 mA, <8 GHz VR = -10 mA, 2.3 ~ 2.7 GHz
VR = ...