MEST2GFC-010-25

MEST2GFC-010-25 Pin Diode Switch Element Features  Supports up to 10 W Power  Low Insertion Loss: 0.4 dB up to 40 GHz  High Isolation: 12 dB @ 10 GHz  RoHS* Compliant Description A broadband medium power series switch element in chip form (26 x 12 mils). This is an electrical series device with a direct thermal path to ground (EST2G). It can be used in place of beam lead devices for medium power (up to 10 Watts) series switching. It is well suited for other applications from 100 MHz up to 40 GHz Rev. V1 Electrical Specifications: TC = +25°C (unless otherwise specified) Parameter Test Conditions Units Min. Breakdown Voltage (VBR) IR = 10 µA V 100 Lifetime (t) IF = 10 mA, IR = 6 mA, 10% / 50% ns — I-Region (w) I-Layer µm — Series Resistance (RS) IF = 100 mA, 500 MHz Ω— Junction Capacitance (CJ) Insertion Loss (IL) Input Return Loss (IRL) Isolation (ISO) VR = -10 V, 1 MHz IF = 50 mA, 10 GHz IF = 50 mA, <40 GHz IF = 50 mA, 10 GHz IF = 50 mA, <40 GHz ...