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MFIRF4N65

Global Semiconductor

POWER MOSFET


Description
MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Characteristics Characteristics Values Units IDS 4 A IDM 16 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF4N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without...



Global Semiconductor

MFIRF4N65

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