MG6307WZ
650V 25A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
65...
MG6307WZ
650V 25A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 25A 1.5V 1328pcs
lFeatures 1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation
Voltage
3) High Speed Switching
4) Low Switching Loss & Soft Switching
lApplication PFC UPS Welding Solar Inverter IH
lOutline
Wafer
lInner Circuit
(2)
(1) (3)
lAbsolute Maximum Ratings Parameter
Collector - Emitter
Voltage, Tj = 25°C Gate - Emitter
Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol VCES VGES IC*1 ICP*2 Tj
Datasheet
(1) Gate (2) Collector (3) Emitter
Value 650 ±30
*1)
100 -40 to +175
Unit V V A A °C
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1/3
2019.08 - Rev.A
MG6307WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Reverse Bias Safe Operating Area
IC = 100A, VCC = 520V, RBSOA*3 VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175℃
*3 Design assurance without measurement
Values Min. Typ. Max.
FULL SQUARE
Unit -
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Unit
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650 -
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = ±30V, VCE = 0V
-
- ±200 nA
Gate ...