MG6405WZ

MG6405WZ 650V 60A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 60A 1.5V 568pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) lApplication Solar Inverter UPS Welding IH PFC lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Datasheet (1) Gate (2) Collector (3) Emitter Value 650 ±30 *1) 240 -40 to +175 Unit V V A A °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG6405WZ Datasheet lDesign Assurance Parameter Symbol Conditions Short Circuit Withstand Time VCC ≦ 360V, tsc*3 VGE = 15V, Tj = 25℃ Reverse Bias Safe Operating Area IC = 240A, VCC = 520V, RBSOA*3 VP = 650V, VGE = 15V, RG = 100Ω, Tj = 175℃ *3 Design assurance without measurement Values Min. Typ. Max. 2- - FULL SQUARE Unit μs - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE =...