DatasheetsPDF.com

MG800J2YS50A Datasheet

Part Number MG800J2YS50A
Manufacturers Toshiba
Logo Toshiba
Description TOSHIBA IGBT Module Silicon N Channel IGBT
Datasheet MG800J2YS50A DatasheetMG800J2YS50A Datasheet (PDF)

MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications · · · The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Unit: mm Equivalent Circuit TH1 TH2 C1 G1 Fo1 E1 E1/C2 JEDEC G2 Fo2 E2 E2 ― ― 2-126A1A JEITA TOSHIBA Weight: 680 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipati.

  MG800J2YS50A   MG800J2YS50A






Part Number MG800J2YS50A
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description High power switching applications Motor control applications
Datasheet MG800J2YS50A DatasheetMG800J2YS50A Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI IGBT Module MG800J2YS50A MG800J2YS50A High power switching applications Motor control applications • • • The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Equivalent Circuit TH1 TH2 C1 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2 2004-10-01 1/9 MG800J2YS50A Package Dimensions Unit: mm Weight: 680 g (typ.) 2004-10-01 2/9 MG800J2YS50A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector cu.

  MG800J2YS50A   MG800J2YS50A







TOSHIBA IGBT Module Silicon N Channel IGBT

MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications · · · The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Unit: mm Equivalent Circuit TH1 TH2 C1 G1 Fo1 E1 E1/C2 JEDEC G2 Fo2 E2 E2 ― ― 2-126A1A JEITA TOSHIBA Weight: 680 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol ¾ ¾ Rating 600 ±20 800 800 2900 150 -40~125 2500 (AC 1 min) 10 3 Unit V V A A W °C °C V N・m N・m 1 2002-10-31 MG800J2YS50A Electrical Characteristics (Ta = 25°C) Characteristics Gate Leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Gate-emitter voltage Gate resistance Symbol IGES ICES VGE (off) VCE (sat) Cies VGE RG td (on) tr Switching time ton td (off) tf toff Forward voltage Reverse recovery time Thermal resistance RTC Operating current VF trr Rth (j-c) Irtc IF = 800A, VGE = 0V Tj = 25°C Tj = 125°C Inductive load VCC = 300 V IC = 800 A VGE = ±15 V RG = 4.7 W Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 800 mA, VCE = 5 V IC = 800 A, VGE = 15 V Tj = 25°C Tj = 125°C Min ¾ ¾ ¾ ¾ ¾ ¾ 13 4.7 ¾ ¾ ¾ ¾ (Note) ¾ ¾ ¾ ¾ ¾ ¾ ¾ 1600 Typ.


2005-04-29 : MC44251    MC44250    MST4110C    STR5412    SDA2008    SDA20000    LM121SS1T53    M383L2828ET1    M383L2920BTS-A2    M383L2920BTS-CAA   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)