MGA-412P8

MGA-412P8 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications Data Sheet Description Avago Technologies’s MGA-412P8 linear power amplifier is designed for applications in the (1.7-3) GHz frequency range. The amplifier is optimized for IEEE 802.11b/g WLAN applications and has a best-inclass efficiency (PAE) of 25.5% (54Mbps OFDM) achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process. The MGA-412P8 is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile and excellent thermal efficiency of the LPCC package makes the MGA-412P8 an ideal choice as a power amplifier for mobile IEEE 802.11b/g WLAN applications. It achieves +19.0 dBm linear output power that meets 3% EVM at 54Mbps data rate (OFDM Modulation), and 23dBm at 11Mbps (CCCK modulation). Features Advanced GaAs E-pHEMT Integrated power detector & power down functions High efficiency Single +3.3V Supply Small Footprint: 2x2mm2 Low Profile: 0.8mm max. Specifications At 2.452 GHz; 3.3V (Typ.) : Gain: 25.5 dB P1dB: 25.3 dBm Pout linear with IEEE 802.11g OFDM modulation @54Mbps data rate: 19.0 dBm @ 3% EVM. Current @19dBm linear Pout: (54Mbps) : 95mA Reverse Isolation (typ): > 40dB Quiescent current (typ): 40mA Meets IEEE 802.11b @11Mbps (CCCK modulation) with Pout: 23dBm while consuming 200mA. Component Image 2.0 x 2.0 x 0.75 mm 8-lead LPCC Pin 8...