PHEMT Power Amplifier
MGA-425P8
GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
Data Sheet
Description
Avago Technolog...
Description
MGA-425P8
GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
Data Sheet
Description
Avago Technologies’s MGA-425P8 power amplifier is designed for wireless application in the 2–10 GHz frequency range. The PA has a high power efficiency (PAE) achieved through the use of Avago Technologies’s proprietary GaAs Enhancementmode pHEMT process. MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8‑lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile couple with the excellent thermal efficiency of the LPCC package makes the MGA‑425P8 an ideal choice as power amplifier that saves board space. On-chip bias circuitry allows operation from a single +3.3V power supply. The output of the amplifier is near to 50Ω (below 2:1VSWR) around 4.9–5.8 GHz.This makes MGA-425P8 an ideal choice as power amplifier for broadband IEEE 802.11a system as well as other high performance wireless application in the 2–10 GHz frequency range. One external resistor (RBias) is used to set the bias current of the device over a wide range. This allows the designer to use the same part in several circuit positions and tailor the output power/linearity performance, and current consumption, to suit each position.
Pin Connections and Package Marking 2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 8 (NC)
Pin 2 (RFin) Pin 3 (NC)
2YX
Pin 7 (RFout, VD) Pin 6 (NC)
Pin 4 (NC)
Top View
Pin 5 (RBias)
Note: Package marking provides orientation and identifica...
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