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MGBR10L40

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO.,LTD MGBR10L40 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L40 is a...


UTC

MGBR10L40

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Description
UNISONIC TECHNOLOGIES CO.,LTD MGBR10L40 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10L40L-T27-R MGBR10L40G-T27-R Note: Pin Assignment: A: Anode K: Common Cathode Package TO-277 Pin Assignment 123 AKA MGBR10L40L-T27-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) T27: TO-227 (3)Lead Free (3) L: Lead Free, G: Halogen Free Packing Tape Reel  MARKING INFORMATION PACKAGE TO-277 MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-202.a MGBR10L40 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage WorkingPeak Reverse Voltage VRM VRWM 40 40 V V Peak Repetitive Reverse Voltage Average Rectified Output Current TC=140°C VRRM IO 40 10 V A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 150 A Repetitive Peak Avalanche Power (1μs, 25°C) PARM 5000 W Operating Junction Temperature Storage Temperature TJ TSTG -65~+150 -65~+150 °C °...




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