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MGBR10S40

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10S40 Preliminary MOS GATED BARRIER RECTIFIER „ DESCRIPTION The UTC MGBR10S40 is ...


UTC

MGBR10S40

File Download Download MGBR10S40 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10S40 Preliminary MOS GATED BARRIER RECTIFIER „ DESCRIPTION The UTC MGBR10S40 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high current capability, etc. The UTC MGBR10S40 suitable for free wheeling, high frequency inverters, polarity protection, and low voltage. „ FEATURES * Super low forward voltage drop * High current capability * High surge capability * High efficiency „ SYMBOL DIODE „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10S40L-T27-R MGBR10S40G-T27-R Note: Pin Assignment: A: Anode K: Common Cathode Package TO-277 Pin Assignment 123 AKA Packing Tape Reel „ MARKING www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-243.a MGBR10S40 Preliminary DIODE „ ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage (Note 1) VRM 40 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 40 40 V V RMS Reverse Voltage Average Rectified Output Current TC=125°C VR(RMS) IO 28 10 V A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 175 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absol...




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