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MGBR10U50C

Unisonic Technologies

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10U50C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10U...


Unisonic Technologies

MGBR10U50C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10U50C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10U50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.  FEATURES * Ultra low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10U50CL-TA3-T MGBR10U50CG-TA3-T MGBR10U50CL-TF3-T MGBR10U50CG-TF3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F Pin Assignment 123 AKA AKA Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-151.b MGBR10U50C Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 50 50 V V Average Rectified Forward Current Per Leg 5A (Rated VR-20KHz Square Wave) – 50% IO duty cycle Total 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 180 A Peak Repetitive Reverse Surge Current (2μS-1kHz) Operating Junction Temperature IRRM TJ 2 -65~+150 A °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are tho...




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