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MGBR10V60C

Unisonic Technologies

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10V60C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10V...


Unisonic Technologies

MGBR10V60C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10V60C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10V60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.  FEATURES * Very low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10V60CL-TA3-T MGBR10V60CG-TA3-T MGBR10V60CL-TN3-R MGBR10V60CG-TN3-R Note: Pin Assignment: A: Anode K: Common Cathode Package TO-220 TO-252 Pin Assignment 123 AKA AKA Packing Tube Tape Reel  MARKING TO-220 TO-252 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-138.b MGBR10V60C Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 60 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 60 60 V V Average Rectified Forward Current Per Leg 5A (Rated VR-20KHz Square Wave) – 50% IO duty cycle Total 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 120 A Peak Repetitive Reverse Surge Current (2μS-1kHz) Operating Junction Temperature IRRM TJ 2 -65~+150 A °C Storage Temperature TSTG -65~+150 °C Note: Absolu...




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