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MGBR12L30

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO.,LTD MGBR12L30 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR12L30 is a...


UTC

MGBR12L30

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Description
UNISONIC TECHNOLOGIES CO.,LTD MGBR12L30 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR12L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR12L30L-T27-R MGBR12L30G-T27-R Note: Pin Assignment: A: Anode K: Common Cathode Package TO-277 Pin Assignment 123 AKA MGBR12L30L-T27-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) T27: TO-227 (3)Lead Free (3) L: Lead Free, G: Halogen Free Packing Tape Reel  MARKING INFORMATION PACKAGE TO-277 MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-230.a MGBR12L30 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage WorkingPeak Reverse Voltage VRM VRWM 30 30 V V Peak Repetitive Reverse Voltage RMS Reverse Voltage VRRM VR(RMS) 30 21 V V Average Rectified Output Current TC=140°C IO 12 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 200 A Repetitive Peak Avalanche Power (1μs, 25°C) Operating Junction Temperature PARM TJ 5000 -65~+150 W °C St...




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