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MGBR20U50C

UNISONIC TECHNOLOGIES

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR20U50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UT C MG...


UNISONIC TECHNOLOGIES

MGBR20U50C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR20U50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UT C MGBR20U50C is a du al m os g ated barr ier r ectifiers, it uses UT C’s advanc ed tech nology to pro vide custom ers with lo w forward voltage drop and high switching speed, etc. The UTC MGBR20U50C suitable for supply applications.  FEATURES * Ultra low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 A K A Packing Tube Ordering Number Lead Free Halogen Free MGBR20U50CL-TA3-T MGBR20U50CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-161.a http://www.Datasheet4U.com MGBR20U50C  Preliminary DIODE ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage VRWM 50 V Peak Repetitive Reverse Voltage VRRM 50 V Average Rectified Forward Current Per Leg 10 A (Rated VR-20Khz Square Wave) - 50% IO Total 2 0 A Duty Cycle Peak Forward Surge Current - 1/2 60hz IFSM 250 A Peak Repetitive Reverse Surge Current (2uS-1Khz) IRRM 2 A Maximum Rate of Voltage Change ( at Rated VR ) dv/dt 10000 V/μS Operating Junction Temperature TJ -65~ +150 °C Storage Junction Temperature TSTG -65~ +150 °C Note: Absolute maximum rati...




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