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MGBR30L150C

UTC

Dual MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO.,LTD MGBR30L150C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L...


UTC

MGBR30L150C

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Description
UNISONIC TECHNOLOGIES CO.,LTD MGBR30L150C Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L150C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc. 1  FEATURES * Low forward voltage drop * High switching speed 1  SYMBOL DIODE TO-220 TO-220F1  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MGBR30L150CL-TA3-T MGBR30L150CG-TA3-T TO-220 MGBR30L150CL-TF1-T MGBR30L150CG-TF1-T TO-220F1 Note: Pin Assignment: A: Anode K: Common Cathode Pin Assignment 123 AKA AKA Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-036.b MGBR30L150C Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 150 V WorkingPeak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 150 150 V V Average Rectified Output Current (TC=140°C) Per Leg Total IO 15 30 A A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 200 A Repetitive Peak Avalanche Power (1μs, 25°C) PARM 5000 W Operating Junction Temperature Storage Temperature TJ TSTG -65~+150 -65~+150 °C °C Note: Absolute maximum ratings are those values beyond wh...




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