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MGBR30L60C

UNISONIC TECHNOLOGIES

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR30L60C DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION DIODE The U TC MGBR30L60C is ...


UNISONIC TECHNOLOGIES

MGBR30L60C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR30L60C DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION DIODE The U TC MGBR30L60C is a dua l mos g ated barri er rect ifiers, it uses UT C’s advanc ed tech nology to pro vide custom ers with lo w forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-220 TO-3P Pin Assignment 1 2 3 A K A A K A Packing Tube Tube Ordering Number Lead Free Halogen Free MGBR30L60CL-TA3-T MGBR30L60CG-TA3-T MGBR30L60CL-T3P-T MGBR30L60CG-T3P-T Note: Pin Assignment: A: Anode, K: Cathode  MARKING INFORMATION PACKAGE MARKING TO-220/TO-3P www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-109.B http://www.Datasheet4U.com MGBR30L60C  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) DIODE Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. UNIT PARAMETER SYMBOL RATINGS DC Blocking Voltage VRM 60 V Working Peak Reverse Voltage VRWM 60 V Peak Repetitive Reverse Voltage VRRM 60 V Per Leg 15 A Average Rectified Output Current Per Device IO Total 3 0 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 200 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute max...




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