UNISONIC TECHNOLOGIES CO., LTD MGBR30S45C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The U TC MG...
UNISONIC TECHNOLOGIES CO., LTD MGBR30S45C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The U TC MGBR30S45C is a du al mos gated barri er rect ifiers, it uses UT C’s advanc ed tech nology to pro vide custom ers with lo w forward
voltage drop and high switching speed, etc.
FEATURES
* Super low forward
voltage drop * High switching speed
SYMBOL
ORDERING INFORMATION
Package TO-252 TO-252 Pin Assignment 1 2 3 A K A A K A Packing Tube Tape Reel
Ordering Number Lead Free Halogen Free MGBR30S45CL-TN3-T MGBR30S45CG-TN3-T MGBR30S45CL-TN3-R MGBR30S45CG-TN3-R Note: Pin Assignment: A: Anode, K: Cathode
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QW-R601-168.a
http://www.Datasheet4U.com
MGBR30S45C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking
Voltage VRM 45 V Working Peak Reverse
Voltage VRWM 45 V Peak Repetitive Reverse
Voltage VRRM 45 V Per Leg 15 A Average Rectified Output Current Per Device IO Total 3 0 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 250 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are ...