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MGBR5L100

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR5L100 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5L100 is ...


UTC

MGBR5L100

File Download Download MGBR5L100 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD MGBR5L100 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5L100 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR5L100L-TN3-T MGBR5L100G-TN3-T - MGBR5L100G-K08-5060-R Note: Pin Assignment: A: Anode K: Cathode Package TO-252 DFN-8(5×6) Pin Assignment 123 4 5678 Packing A K A - - - - - Tube A A A NC K K K K Tape Reel  MARKING TO-252 DFN-8(5×6) www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-041.c MGBR5L100 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 100 V Working Peak Reverse Voltage Repetitive Peak Reverse Voltage VRWM VRRM 100 100 V V RMS Reverse Voltage Average Rectified Output Current TC=80°C VR(RMS) IO 70 5 V A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 150 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently d...




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