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MGBR5V45

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR5V45 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5V45 is a ...


UTC

MGBR5V45

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR5V45 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5V45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.  FEATURES * Very low forward voltage drop * High switching speed  SYMBOL - DIODE + SMB  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR5V45L-SMB-R MGBR5V45G-SMB-R Note: Pin Assignment: A: Anode K: Common Cathode Package SMB Pin Assignment 12 KA Packing Tape Reel  MARKING Cathode Band for uni-directional Only UTC 5V45 Date Code L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-040.b MGBR5V45 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage Working Peak Reverse Voltage VRM VRWM 45 45 V V Repetitive Peak Reverse Voltage RMS Reverse Voltage VRRM VR(RMS) 45 32 V V Average Rectified Output Current TC=140°C IO 5A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 90 A Repetitive Peak Avalanche Power (1μs, 25°C) Operating Junction Temperature PARM TJ 5000 -65~+150 W °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are th...




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