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MGF4936AM Datasheet

Part Number MGF4936AM
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description SUPER LOW NOISE InGaAs HEMT
Datasheet MGF4936AM DatasheetMGF4936AM Datasheet (PDF)

< Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary.

  MGF4936AM   MGF4936AM






SUPER LOW NOISE InGaAs HEMT

< Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V , ID=7mA ORDERING INFORMATION General part number: MGF4936AM-75 Tape & reel 15000pcs/reel www.DataSheet.net/ RoHS COMPLIANT MGF4936AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -3 -3 IDSS 50 125 -55 to +125 (Ta=25C ) Unit V V mA mW C C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V, -3.5 -12 -0.1 11.0 -- Limits TYP. ----12.0 0.50 MAX -50 60 -1.5 -0.70 Unit V A m.


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