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MGF4941CL Datasheet

Part Number MGF4941CL
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Micro-X type plastic package
Datasheet MGF4941CL DatasheetMGF4941CL Datasheet (PDF)

< Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.) Fig.1 APPLICATION K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to.

  MGF4941CL   MGF4941CL






Micro-X type plastic package

< Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.) Fig.1 APPLICATION K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=1.5V, VGS=0V ORDERRING INFORMATION Tape & reel 4000pcs./reel www.DataSheet.net/ RoHS COMPLIANT MGF4941CL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -3 -3 55 75 125 -55 to +125 (Ta=25C ) Unit V V mA mW C C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=1.5V VDS=1.5V,ID=500A VDS=1.5V, -3 -15 -0.1 7.5 -- Limits TYP. ----10.0 2.4 MAX -50 60 -1.5 -3.8 Unit V A mA V dB dB VGS=0V,f=25.2GHz NFmin. Mini.


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