< Low Noise GaAs HEMT >
MGF4963BL
Micro-X type plastic package
DESCRIPTION
The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Outline Drawing
FEATURES
Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
C to K band low ...
