MGP11N60E

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP11N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device. Industry Standard TO–220 Package High Speed: Eoff = 60 mJ/A typical at 125°C High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V Low On–Voltage 2.0 V typical at 8.0 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes ™ Data Sheet MGP11N60E IGBT IN TO–220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE C G C G E CASE 221A–06 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 ...