MGP15N35CL, MGB15N35CL
Preferred Device
Ignition IGBT 15 Amps, 350 Volts
N−Channel TO−220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition
System Applications
• H.
Internally Clamped N-Channel IGBT
MGP15N35CL, MGB15N35CL
Preferred Device
Ignition IGBT 15 Amps, 350 Volts
N−Channel TO−220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition
System Applications
• High Pulsed Current Capability up to 50 A • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage • Optional Gate Resistor (RG)
MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous @ TC = 25°C − Pulsed
VCES VCER VGE
IC
380 VDC
380 VDC
22
VDC
15
ADC
50
AAC
ESD (Human Body Model) R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
150 Watts
1.0 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to °C 175
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C)
Characteristic
Symbol Value Unit
Single Pulse Collector−t.