MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Tran...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP15N60U/D
Product Preview
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies. Industry Standard TO–220 Package High Speed Eoff: 67 mJ/A typical at 125°C Low On–
Voltage – 1.7 V typical at 8.0 A, 125°C Robust High
Voltage Termination ESD Protection Gate–Emitter Zener Diodes
MGP15N60U
IGBT IN TO–220 15 A @ 90°C 26 A @ 25°C 600 VOLTS VERY LOW ON–
VOLTAGE
C
G
G C E
E
CASE 221A–09, Style 9 TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector–Emitter
Voltage Collector–Gate
Voltage (RGE = 1.0 MΩ) Gate–Emitter
Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notic...