MGP20N40CL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N40CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors Low Saturation Voltage High Pulsed Current Capability MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED) ® C G G Rge C E E CASE 221A–06, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5 – 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV °C t 100 ms IC ICR PD ESD TJ, Tstg Total Power Dissipation @ TC = 25°C (TO–220) Electrostatic Voltage — Gate–Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw RqJC RqJA TL 1.0 62.5 275 10 lbfin (1.13 Nm) °C/W °C...