MGP20N60U

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N60U/D Product Preview Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies. Industry Standard TO–220 Package High Speed Eoff: 67 mJ/A typical at 125°C Low On–Voltage – 1.7 V typical at 10 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes MGP20N60U IGBT IN TO–220 20 A @ 90°C 31 A @ 25°C 600 VOLTS VERY LOW ON–VOLTAGE C G G C E E CASE 221A–09, Style 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. This document contains information on a new product. Specifications and information herein are subject to change without notice...