MGPN Series
GaAs PIN Diodes
Features
Nanosecond Switching Speed with Low-Cost TTL Logic
Low Series Resistance No Reverse Bias Required for Low Loss RoHS* Compliant
Description
The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, >26 GHz, switch and high speed modulation applications.
Rev. V1
Electrical Characteristics, TC = +25°C
Parameters Units
Test Condition
MGPN0515-C12
VBR
V
IR = 10 µA
Min.
Typ.
50 68
VF CJ RS TL
mV pF
Ohms
ns
IF = 10 m.
GaAs PIN Diodes
MGPN Series
GaAs PIN Diodes
Features
Nanosecond Switching Speed with Low-Cost TTL Logic
Low Series Resistance No Reverse Bias Required for Low Loss RoHS* Compliant
Description
The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, >26 GHz, switch and high speed modulation applications.
Rev. V1
Electrical Characteristics, TC = +25°C
Parameters Units
Test Condition
MGPN0515-C12
VBR
V
IR = 10 µA
Min.
Typ.
50 68
VF CJ RS TL
mV pF
Ohms
ns
IF = 10 mA VR= 10 V, F = 1 MHz IF = 20 mA, F = 1 GHz IF = 10 mA IR = 6 mA
Typ.
Typ.
Max.
Typ.
Max.
Typ.
Max.
1300
0.13
0.15
0.85
1.0
6
9
MGPN0518-C12
50
68
1300
0.16
0.18
0.75
1.0
6
9
MGPN1506-C12
150
205
1300
0.05
0.06
1.6
2.0
15
20
MGPN1504-C01A 150
205
1350
0.036
0.04
2.0
3.0
8
10
MGPN1503-C01A 150
205
1350
0.027
0.03
2.0
3.0
8
10
Absolute Maximum Ratings
Rating
VR IF ƟJC PDISS
TJ TSTG Tdie attach Electrostatic Discharge (ESD)
Limits
Vbr.