MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGR1018/D
Advance Information
Power Manager™
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGR1018/D
Advance Information
Power Manager™
Gallium Arsenide Power Rectifier
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: Planar Epitaxial Construction Nitride Passivation for Stable Blocking Characteristics Monolithic Dual Die Available (MGR2018CT) Epoxy Meets UL94, VO @ 1/8″ Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns) Mechanical Characteristics Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: MGR1018
MGR1018
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
1,3
2,4
4
1 2 3
CASE 221A-06 TO-220AB Value 180 Unit V
MAXIMUM RATINGS
Rating Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage DC Forward Current (TC = 110°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 85°C) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Symbol VRRM VRWM VR IDC IFRM IFSM TJ, Tstg
10 20 60 – 55 to 175
A A A °C °C/W
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case – Junction to Ambient Rθ...