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MGSF1N02EL Datasheet

Part Number MGSF1N02EL
Manufacturers Motorola
Logo Motorola
Description N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
Datasheet MGSF1N02EL DatasheetMGSF1N02EL Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc .

  MGSF1N02EL   MGSF1N02EL






Part Number MGSF1N02ELT3
Manufacturers Motorola
Logo Motorola
Description N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
Datasheet MGSF1N02EL DatasheetMGSF1N02ELT3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc .

  MGSF1N02EL   MGSF1N02EL







Part Number MGSF1N02ELT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MGSF1N02EL DatasheetMGSF1N02ELT1G Datasheet (PDF)

MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extend.

  MGSF1N02EL   MGSF1N02EL







Part Number MGSF1N02ELT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MGSF1N02EL DatasheetMGSF1N02ELT1 Datasheet (PDF)

MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extend.

  MGSF1N02EL   MGSF1N02EL







Part Number MGSF1N02ELT1
Manufacturers Motorola
Logo Motorola
Description N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
Datasheet MGSF1N02EL DatasheetMGSF1N02ELT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc .

  MGSF1N02EL   MGSF1N02EL







N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life 1 GATE MGSF1N02ELT1 Motorola Preferred Device N–CHANNEL LOGIC LEVEL ENHANCEMENT–MODE TMOS MOSFET ™ 3 3 DRAIN 1 2 CASE 318–08, Style 21 SOT–23 (TO–236AB) • Miniature SOT–23 Surface Mount Package Saves Board Space 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 20 ± 8.0 750 2000 400 – 55 to 150 300 260 Unit Vdc Vdc mA mW °C °C/W °C ORDERING INFORMATION Device MG.


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