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MGSF1P02LT3 Datasheet

Part Number MGSF1P02LT3
Manufacturers Motorola
Logo Motorola
Description P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Datasheet MGSF1P02LT3 DatasheetMGSF1P02LT3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1P02LT1/D MGSF1P02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management cir.

  MGSF1P02LT3   MGSF1P02LT3






Part Number MGSF1P02LT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MGSF1P02LT3 DatasheetMGSF1P02LT1 Datasheet (PDF)

MGSF1P02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts P–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) Provides Higher Efficiency and Extends Battery .

  MGSF1P02LT3   MGSF1P02LT3







Part Number MGSF1P02LT1
Manufacturers Motorola
Logo Motorola
Description P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Datasheet MGSF1P02LT3 DatasheetMGSF1P02LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1P02LT1/D MGSF1P02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management cir.

  MGSF1P02LT3   MGSF1P02LT3







P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1P02LT1/D MGSF1P02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET ™ 3 3 DRAIN 1 2 1 GATE 2 SOURCE CASE 318–08, Style 21 SOT–23 (TO–236AB) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 20 ± 20 750 2000 225 – 55 to 150 625 260 Unit Vdc Vdc mA mW °C °C/W °C ORDERING INFORMATION Device MGSF1P02LT1 MGSF1.


2005-04-27 : CXA1019S    VK648    VK648    VK648    RC242001    M39012    BF178    IDT2309    IDT2309A    IDT23S05   


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