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MGSF2N02EL

ON Semiconductor

N-Channel MOSFET

MGSF2N02EL, MVSF2N02EL MOSFET – N-Channel, SOT-23 2.8 A, 20 V These miniature surface mount MOSFETs low RDS(on) assure ...


ON Semiconductor

MGSF2N02EL

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Description
MGSF2N02EL, MVSF2N02EL MOSFET – N-Channel, SOT-23 2.8 A, 20 V These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature AEC Q101 Qualified and PPAP Capable − MVSF2N02EL These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Converters Power Management in Portable and Battery Powered Products, ie: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS 20 Vdc VGS ± 8.0 Vdc A ID 2.8 IDM 5.0 PD 1.25 W TJ, Tstg − 55 to °C 150 Thermal Resistance Junction−to−Ambient (Note 1) Thermal Resistance Junction−to−Ambient (Note 2) RqJA °C/W 100 300 Maximum Lead Temperature for Soldering TL Purposes, 1/8″ from case for 10 seconds 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 1” Pad, t...




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