MH2101WZ

MH2101WZ 650V 30A Fast Recovery Diode VRM IF (Nominal) VF (Typ.) Max. Possible Chips per Wafer 650V 30A 1.45V 1612pcs lFeatures 1) Light Punch Through Type 2) Low Forward Voltage 3) Very Fast & Soft Recovery 4) Low Recovery Loss lApplication Free Wheeling lOutline Wafer lInner Circuit (1) (2) Datasheet (1) Anode (2) Cathode lAbsolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VRM IF*1 IFP*2 Tj Value 650 *1) 120 -40 to +175 Unit V A A °C lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Breakdown Voltage BV IR = 10μA 650 - -V Reverse Current IR VR = 650V Forward Voltage IF = 30A, VF*3 Tj = 25°C Tj = 175°C *3 Design assurance without measurement - - 10 μA - 1.45 1.9 V - 1.55 - www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/2 2019.08 - Rev.A MH2101WZ lChip Information Datasheet ① 325 3.00 2250 325 2900 3000 0.10±0.03 3.00 Unit：mm Unit : μm : Pad Area ① : Anode Bonding Pad Backside : Cathode Wafer Size 150mm Wafer Thickness 0.07±0.01mm Chip Size 3.00mm×3.00mm Cut Line Width 0.10±0.03mm Top Side Metallization AlSiCu:5.0μm Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm Passivation Polyimide lFurther Electrical Characteristics Switching ch...