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MHF04N60CT Datasheet
Part Number
MHF04N60CT
Manufacturers
CITC
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Description
Silicon N-Channel Power MOSFET
Datasheet
MHF04N60CT Datasheet (PDF)
Chip Integration Technology Corporation MHF04N60CT Silicon N-Channel Power MOSFET Main Product Characteristics ID VDSS PD(TC=25oC) RDS(ON)Typ 4A 600V 30W 1.8Ω ■ Features • Fast switching. • ESD improved capability. • Low gate charge. (Typical Data:14.5nC) • Low reverse transfer capacitances.(Typical:8.5pF) • 100% single pulse avalanche energy test. ■ Application • Power switch circuit of adaptor and charger. ■ Outline TO-220F 123 1.Gate 2.Drain 3.Source Drain ■ Mechanical data • Epoxy:U.
Silicon N-Channel Power MOSFET
Chip Integration Technology Corporation MHF04N60CT Silicon N-Channel Power MOSFET Main Product Characteristics ID VDSS PD(TC=25oC) RDS(ON)Typ 4A 600V 30W 1.8Ω ■ Features • Fast switching. • ESD improved capability. • Low gate charge. (Typical Data:14.5nC) • Low reverse transfer capacitances.(Typical:8.5pF) • 100% single pulse avalanche energy test. ■ Application • Power switch circuit of adaptor and charger. ■ Outline TO-220F 123 1.Gate 2.Drain 3.Source Drain ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-220F molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. Gate Source Inner Equivalent principium Chart ■ Absolute(TC = 25OC unless otherwise specified) PARAMETER Drain to Source Voltage CONDITIONS Continuous Drain Current Continuous Drain Current Pulsed Drain Current(Note:1) Gate to Source Voltage Single Pulse Avalanche Energy(Note:2) Avalanche Current(Note.
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