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MHL21336N Amplifier Datasheet PDFRF Linear LDMOS Amplifier RF Linear LDMOS Amplifier |
| Part Number | MHL21336N |
|---|---|
| Description | RF Linear LDMOS Amplifier |
| Feature | www. DataSheet4U. com Freescale Semicondu ctor Technical Data Document Number: M HL21336N Rev. 7, 8/2006 3G Band RF Lin ear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 oh m systems operating in the 3G frequency band. A silicon FET Class A design pro vides outstanding linearity and gain. I n addition, the excellent group delay a nd phase linearity characteristics are ideal for digital CDMA modulation syste ms. • Third Order Intercept: 45 dBm T yp • Power Gain: 31 dB Typ (@ f = 214 0 MHz) • Input VSWR v 1. 5:1 Features • Excellent Phase Linearity and Group Delay Characteristics . |
| Manufacture | Motorola Semiconductor |
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| Part Number | MHL21336N |
|---|---|
| Description | RF Linear LDMOS Amplifier |
| Feature | www. DataSheet4U. com Freescale Semicondu ctor Technical Data Document Number: M HL21336N Rev. 7, 8/2006 3G Band RF Lin ear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 oh m systems operating in the 3G frequency band. A silicon FET Class A design pro vides outstanding linearity and gain. I n addition, the excellent group delay a nd phase linearity characteristics are ideal for digital CDMA modulation syste ms. • Third Order Intercept: 45 dBm T yp • Power Gain: 31 dB Typ (@ f = 214 0 MHz) • Input VSWR v 1. 5:1 Features • Excellent Phase Linearity and Group Delay Characteristics . |
| Manufacture | Motorola Semiconductor |
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