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MHL21336N Amplifier Datasheet PDF

RF Linear LDMOS Amplifier

RF Linear LDMOS Amplifier

 

 

 

Part Number MHL21336N
Description RF Linear LDMOS Amplifier
Feature www.
DataSheet4U.
com Freescale Semicondu ctor Technical Data Document Number: M HL21336N Rev.
7, 8/2006 3G Band RF Lin ear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 oh m systems operating in the 3G frequency band.
A silicon FET Class A design pro vides outstanding linearity and gain.
I n addition, the excellent group delay a nd phase linearity characteristics are ideal for digital CDMA modulation syste ms.

• Third Order Intercept: 45 dBm T yp
• Power Gain: 31 dB Typ (@ f = 214 0 MHz)
• Input VSWR v 1.
5:1 Features
• Excellent Phase Linearity and Group Delay Characteristics .
Manufacture Motorola Semiconductor
Datasheet
Download MHL21336N Datasheet

MHL21336N

 

 

 


 

 

 

Part Number MHL21336N
Description RF Linear LDMOS Amplifier
Feature www.
DataSheet4U.
com Freescale Semicondu ctor Technical Data Document Number: M HL21336N Rev.
7, 8/2006 3G Band RF Lin ear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 oh m systems operating in the 3G frequency band.
A silicon FET Class A design pro vides outstanding linearity and gain.
I n addition, the excellent group delay a nd phase linearity characteristics are ideal for digital CDMA modulation syste ms.

• Third Order Intercept: 45 dBm T yp
• Power Gain: 31 dB Typ (@ f = 214 0 MHz)
• Input VSWR v 1.
5:1 Features
• Excellent Phase Linearity and Group Delay Characteristics .
Manufacture Motorola Semiconductor
Datasheet
Download MHL21336N Datasheet

MHL21336N

 

 

 

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