MHL9236

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL9236/D The RF Line Cellular Band RF Linear LDMOS Amplifiers Designed for ultra–linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. Third Order Intercept: 47 dBm Typ Power Gain: 30.5 dB Typ (@ f = 880 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA, CDMA, QPSK or Analog Systems MHL9236 MHL9236M 800–960 MHz 2.5 W, 30.5 dB RF LINEAR LDMOS AMPLIFIERS Freescale Semiconductor, Inc... CASE 301AP–02, STYLES 1, 2 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Output VSWR (f = 880 MHz) (f = 800–960 MHz) (f = 880 MHz) (f = 800–960 MHz) (f = 800–960 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin VSWRout ITO NF Min — 29.5 — 33.0 — — 46.0 — Typ 550 30.5 0.1 34.0 1.2:1 1.2:1 47.0 3.5 Max 62...