MHW1916

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW1916/D Microwave Bipolar Power Amplifier Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min 50 Ohm Input/Output Impedances MHW1916 15 W 1930 – 1990 MHz RF POWER AMPLIFIER CASE 301AK–01, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol VS VB Pin Pout TC Tstg Value 28 5.5 17 23 – 30 to + 95 – 30 to + 100 Unit Vdc Vdc dBm W °C °C ELECTRICAL CHARACTERISTICS (VS = 26 Vdc; VBIAS = 5 Vdc; TC = +25°C; 50 Ω system) Characteristic Frequency Range Total Quiescent Current (Pin = 0 mW) Power Gain (Pout = 15 W) (1) Output Power at 1 dB Compression Efficiency (1 dB Compression Power) Input VSWR (Pout = 15 W) Ripple (Pout = 15 W) Gain Variation at any given Frequency over Output Power (1 mW ≤ Pout ≤ 15 W) Load Mismatch Stress (Pout = 15 W; Load VSWR = 3:1; at All Phase Angles) Stability (Pout = 1 mW – 15 W; Load VSWR = 2:1; at All Phase Angles except Harmonics) Stability (Pout = 1 mW – 15 W; Load VSWR = 2:1; f = 1930 – 1990 MHz; at All Phase Angles) (1) Adjust Pin for specified Pout. Symbol BW Iq Gp P1dB η VSWRIN Rp ∆Gp ψ Min 1930 — 31 15 24 — — — Typ — 300 34 — 27 — 1 1 Max 1990 — 38 — — 2:1 2 2.4 dB dB Unit MHz mA dB Watts % No Degradation in Output Power All Spurious Outputs More than 60 dB Below Desired Signa...