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MHW2707-1

Motorola

UHF Silicon FET Power Amplifier

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2707/D The RF Line UHF Silicon FET Power Amplifier D...


Motorola

MHW2707-1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2707/D The RF Line UHF Silicon FET Power Amplifier Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. Specified 7.5 Volt Characteristics: RF Input Power: 1 mW (0 dBm) RF Output Power: 7 W Minimum Gain (Vcont = 7 V): 38.5 dB Harmonics: – 40 dBc Max @ 2 fo Meets European Transient Specification (ETS 300 113) Epoxy Glass PCB Construction Gives Consistent Performance and Reliability 50 Ω Input/Output Impedances Guaranteed Stability and Ruggedness MHW2707-1 7W 403–440 MHz UHF POWER AMPLIFIER CASE 301AL–01, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltage (Pins 2, 4, 5) DC Control Voltage (Pin 3) RF Input Power RF Output Power (VDD1, 2, 3 = 9 V) Operating Case Temperature Range Storage Temperature Range Symbol VDD1, 2, 3 Vcont Pin Pout TC Tstg Value 9 7 2 9 – 30 to +80 – 30 to +80 Unit Vdc Vdc mW W °C °C REV 1 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MHW2707–1 1 ELECTRICAL CHARACTERISTICS (VDD1 = VDD2 = VDD3 = 7.5 Vdc (Pins 2, 4, 5); TC = +25°C, 50 ohm system unless otherwise noted) Characteristic Frequency Range Control Voltage (Pout = 7 W; Pin = 1 mW) (1) Quiescent Current (VDD1 = VDD2 = VDD3 = 7.5 Vdc; Pin = 0 mW, Vcont = 0 Vdc) Power Gain (Pout = 7 W, Vcont = 7 Vdc) Efficiency (Pout = 7 W; Pin = 1 mW) (1) Harmonics (Pout = 7 W; Pin = 1 mW) (1) Input VSWR (Pout = 7 W; Pin = 1 mW, 50 Ω...




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